Detection of surface states in GaAs and InP by thermally stimulated exoelectron emission spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366420
Reference10 articles.
1. Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments
2. Passivation of surface states of GaAs by plasma polymerized thin films
3. Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfides
4. Study of surface states in (110)n‐GaAs by exoelectron emission measurements
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1. Nano and microscale surface and sub-surface modifications induced in optical materials by femtosecond laser machining;Journal of Materials Processing Technology;2004-06
2. Electrical and XPS studies of 100 MeV Si7+ ion irradiated Pd/n-GaAs devices;Applied Surface Science;2004-05
3. Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-10
4. Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects;Journal of Applied Physics;2001-05
5. Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs;Thin Solid Films;2001-01
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