Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments-Reference-Cited by-同舟云学术

Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Published:2006-12-25 Issue:26 Volume:89 Page:262904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Broqvist Peter,Pasquarello Alfredo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2424441

Reference26 articles.

1. High dielectric constant oxides

2. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

3. Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks

4. MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS

5. Review on high-k dielectrics reliability issues

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