Transmission electron microscope study of ion and electron beam induced structural changes ina‐Ge0.25Se0.75inorganic resist thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331405
Reference10 articles.
1. Germanium selenide: A resist for low‐energy ion beam lithography
2. The chemical reactivity and lithographic sensitivity of obliquely deposited germanium selenide films used as low energy ion beam resists
3. An inorganic resist for ion beam microfabrication
4. A new inorganic electron resist of high contrast
5. A new inorganic electron resist of high contrast
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Photodoping of amorphous chalcogenides by metals;Advances in Physics;1991-10
2. The dissolution of metals in amorphous chalcogenides and the effects of electron and ultraviolet radiation;Journal of Physics C: Solid State Physics;1987-09-20
3. A new model for photodiffusion of silver in amorphous chalcogenides;Journal of Non-Crystalline Solids;1986-12
4. The germanium selenide/polymer bilevel photoresist system — A review;Journal of Electronic Materials;1985-05
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