A closely spaced (50 μm) array of 16 individually addressable buried heterostructure GaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93304
Reference8 articles.
1. Single mode operation of buried heterostructure lasers by loss stabilization
2. Gallium arsenide laser-array-on-silicon package
3. Fabrication Processes for a Silicon Substrate Package or Integrated Gallium Arsenide Laser Arrays
4. Integrated output power detection for AlGaAs laser array
5. A densely packed monolithic linear array of GaAs‐AlxGa1−xAs strip buried heterostructure laser
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1. Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a three-inch φ wafer;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
2. Newly Packaged 50-µm-Spaced 8-Element Laser Diode Array with a Thermoelectric Cooler;Japanese Journal of Applied Physics;1993-11-30
3. Theoretical and Experimental Evaluation of the Effect of Adding a Heat-Bypass Structure to a Laser Diode Array;Japanese Journal of Applied Physics;1993-03-15
4. High-power and high-temperature operation of eight-element, monolithic, 780nm MQW laser diode array on 50 μm centres;Electronics Letters;1993
5. Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8‐beam laser diode array;Journal of Applied Physics;1992-09-15
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