Hole trap state analysis in SrTiO3
Author:
Affiliation:
1. Institute for Solid State Physics, University of Tokyo, Chiba 277-8581, Japan
2. JST, PRESTO, Saitama 332-0012, Japan
Funder
Izumi Science and Technology Foundation
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4991015
Reference25 articles.
1. Heterogeneous photocatalyst materials for water splitting
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3. Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
4. Elucidation of Rh-Induced In-Gap States of Rh:SrTiO3 Visible-Light-Driven Photocatalyst by Soft X-ray Spectroscopy and First-Principles Calculations
5. Temperature Dependence of Photoluminescence Spectra of Nondoped and Electron-DopedSrTiO3: Crossover from Auger Recombination to Single-Carrier Trapping
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