Preparation, thermoelectric properties, and crystal structure of boron-doped Mg2Si single crystals-Reference-Cited by-同舟云学术

Preparation, thermoelectric properties, and crystal structure of boron-doped Mg2Si single crystals

Published:2020-03-01 Issue:3 Volume:10 Page:035115
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Hayashi Kei¹^ORCID,Saito Wataru¹,Sugimoto Kazuya²,Ohoyama Kenji²,Hayashi Kouichi³⁴,Happo Naohisa⁵,Harada Masahide⁶,Oikawa Kenichi⁶^ORCID,Inamura Yasuhiro⁶,Miyazaki Yuzuru¹^ORCID

Affiliation:

1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

2. Institute of Quantum Beam Science, Graduate School of Science and Engineering, Ibaraki University, Tokai 319-1106, Japan

3. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

4. Frontier Research Institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan

5. Department of Computer and Network Engineering, Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan

6. Materials and Life Science Division, J-PARC Center, Tokai 319-1195, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143839

Reference45 articles.

1. Quantitative analysis of interstitial Mg in Mg 2 Si studied by single crystal X-ray diffraction

2. Effect of Interstitial Mg in Mg2+x Si on Electrical Conductivity and Seebeck Coefficient

3. First-principles studies of intrinsic point defects in magnesium silicide

4. Influence of native defects on structural and electronic properties of magnesium silicide

5. Consideration about the synthesis pressure effect on lattice defects of Mg2Si using 1st principle calculations

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