Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3275863
Reference18 articles.
1. Epitaxial silicon and germanium on buried insulator heterostructures and devices
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5. Proceedings of 5th IEEE International Conference on Group IV Photonics;Liu J. F.,2008
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1. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate;Applied Physics Letters;2016-10-03
2. Research progress of Si-based germanium materials and devices;Journal of Semiconductors;2016-08
3. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate;Scientific Reports;2016-06-09
4. Photoluminescence from a quantum well in a ghost cavity;Applied Physics Express;2016-01-29
5. Selective area growth of Ge film on Si;Acta Physica Sinica;2015
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