Lateral band‐gap patterning and carrier confinement in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on nonplanar dot patterns
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107753
Reference13 articles.
1. Electronic structure of ultrasmall quantum-well boxes
2. Electroabsorption of highly confined systems: Theory of the quantum‐confined Franz–Keldysh effect in semiconductor quantum wires and dots
3. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
4. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
5. Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs
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