Characterization of Ga2Se3at ZnSe/GaAs heterovalent interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104762
Reference17 articles.
1. Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers
2. Pseudomorphic ZnSe/n‐GaAs doped‐channel field‐effect transistors by interrupted molecular beam epitaxy
3. Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
4. ZnSe/GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs Surface
5. Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface
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2. Growth of II-VI/III-V heterovalent quantum structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-03
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4. Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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