Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3676576
Reference37 articles.
1. HYDROGEN IN SEMICONDUCTORS
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3. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
4. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
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3. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP;Journal of Applied Physics;2015-01-07
4. Effect of thermal annealing on defects in post-growth hydrogenated GaNP;physica status solidi (c);2013-01-22
5. Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy;Applied Physics Letters;2013-01-14
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