631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions

Abstract

We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature (RT) using CoFe/MgO/CoFe(001) epitaxial magnetic tunnel junctions (MTJs). The TMR ratio increased up to 1143% at 10 K. The large TMR ratios resulted from fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation by interface insertion of ultrathin CoFe and Mg layers, which are expected to enhance the well-known Δ1 coherent tunneling transport. Interestingly, the TMR oscillation effect, which is not covered by the standard coherent tunneling theory, also became significant. A 0.32-nm period TMR oscillation with increasing MgO thickness dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeds 140% at RT, which is attributed to the appearance of large oscillatory components in the resistance area product.