Outdiffusion of the excess carbon in SiC films into Si substrate during film growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368885
Reference12 articles.
1. Scanning Auger Microscopy Study of Heterogeneous Growth of SiC Film on Si(100) by Reaction with a C2H2Beam
2. Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
3. Loss Behaviors of Si Substrate during Growth of the SiC Films Prepared by Hydrogen Plasma Sputtering
4. Plasma Etch Void Formed at the SiC Film/Si Substrate Interface
5. Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
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