Demonstration of excitation‐dependent grain‐boundary recombination velocity in polycrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334036
Reference18 articles.
1. Analysis of minority-carrier transport in polysilicon devices
2. Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution
3. The determination of grain‐boundary recombination rates by scanned spot excitation methods
4. Electron‐beam measurements of minority‐carrier lifetime distributions in ion‐beam‐damaged silicon
5. Direct Measurement of Very Short Minority‐Carrier Diffusion Lengths in Semiconductors
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2. Analysis of solar cells using the IBIC technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-09
3. Quantitative interpretation of electron-beam-induced current grain boundary contrast profiles with application to silicon;Journal of Applied Physics;1998-11-15
4. Reciprocity theorem for charge collection by a surface with finite collection velocity: Application to grain boundaries;Journal of Applied Physics;1994-07-15
5. Comments, with reply, on "A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors" by C.A. Dimitriadis;IEEE Transactions on Electron Devices;1993-06
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