New principle of contactless lifetime determination in semiconductor wafers-Reference-Cited by-同舟云学术

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New principle of contactless lifetime determination in semiconductor wafers

Published:1981-01 Issue:1 Volume:52 Page:60-62
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Hlávka J.

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1136447

Reference10 articles.

1. A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon Wafer

2. Investigation of minority‐carrier diffusion lengths by electron bombardment of Schottky barriers

3. VI-8 contactless measurement of minority carrier lifetime in silicon

4. Determination of diffusion length and surface recombination velocity by light excitation

5. Theory of lifetime measurements in thin semiconductor layers with the scanning electron microscope; transient analysis

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contactless photomagnetoelectric investigations of 2D semiconductors;Beilstein Journal of Nanotechnology;2018-10-25

2. Determination of Diffusion Length of Carriers in Graphene Using Contactless Photoelectromagnetic Method of Investigations;MRS Proceedings;2015

3. Photoelectromagnetic Investigations of Graphene;Acta Physica Polonica A;2014-11

4. Influence of acousto-optical modulation of laser radiation on the results of contactless photoelectromagnetic investigations;SPIE Proceedings;2003-10-06

5. Application of high-frequency contactless method of PEM investigations to examine near-surface layer of Si and GaAs;Vacuum;2000-05

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