Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43212, USA
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4950795
Reference32 articles.
1. Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors
2. Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors
3. Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors
4. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
5. Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor
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