Tuning the carrier density in SrTiO3/LaTiO3/SrTiO3 quantum wells
Author:
Affiliation:
1. Institute for Solid State Physics, University of Tokyo, Chiba 277-8581, Japan
2. Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Fukushima 963-8642, Japan
3. JST, PRESTO, Saitama 332-0012, Japan
Funder
Program for leading graduate schools
Japan Society for the Promotion of Science
Japan Science and Technology Agency
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0006612
Reference39 articles.
1. Emergent phenomena at oxide interfaces
2. Gate-Controlled Spin Injection atLaAlO3/SrTiO3Interfaces
3. Mapping spin–charge conversion to the band structure in a topological oxide two-dimensional electron gas
4. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
5. A spin–orbit playground: surfaces and interfaces of transition metal oxides
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Giant spin-to-charge conversion at an all-epitaxial single-crystal-oxide Rashba interface with a strongly correlated metal interlayer;Nature Communications;2022-09-26
2. Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO3/SrTiO3 heterointerface electron system;Scientific Reports;2022-04-19
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