1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1526933
Reference11 articles.
1. InGaAsP/InGaAs heterojunction p-i-n detectors with low dark current and small capacitance for 1.3–1.6 μm fibre optic systems
2. Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region
3. Avalanche photodiodes with an impact-ionization-engineered multiplication region
4. GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
5. 1.3 μm room-temperature GaAs-based quantum-dot laser
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