Electrically tunable valley-dependent transport in strained silicene constrictions-Reference-Cited by-同舟云学术

Electrically tunable valley-dependent transport in strained silicene constrictions

Published:2019-06-28 Issue:24 Volume:125 Page:244304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Yuan¹²,Jiang W. Q.¹,Ding G. Y.¹,Peng Y. Z.¹,Wen Z. C.¹,Wang G. Q.¹,Bai R.²,Qian Z. H.²,Xiao X. B.³,Zhou G. H.⁴^ORCID

Affiliation:

1. Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China

2. Center for Integrated Spintronic Devices (CISD), Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China

3. School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004, China

4. Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5081996

Reference67 articles.

1. Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene

2. Evidence of graphene-like electronic signature in silicene nanoribbons

3. Epitaxial growth of a silicene sheet

4. Ab initiocalculations for a hypothetical material: Silicon nanotubes

5. Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

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