Phenomenological scattering-rate model for the simulation of the current density and emission power in mid-infrared quantum cascade lasers-Reference-Cited by-同舟云学术

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Phenomenological scattering-rate model for the simulation of the current density and emission power in mid-infrared quantum cascade lasers

Published:2016-04-07 Issue:13 Volume:119 Page:134501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kurlov S. S.¹²,Flores Y. V.¹,Elagin M.¹,Semtsiv M. P.¹,Schrottke L.³^ORCID,Grahn H. T.³^ORCID,Tarasov G. G.²,Masselink W. T.¹

Affiliation:

1. Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Germany

2. Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev-03028, Ukraine

3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945364

Reference34 articles.

1. Quantum Cascade Laser

2. Mid-infrared quantum cascade lasers

3. High-power, continuous-operation intersubband laser for wavelengths greater than 10μm

4. High power quantum cascade lasers

5. Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scattering-rate approach for efficient prediction of temperature-dependent characteristics of mid-infrared quantum cascade lasers;Journal of the Optical Society of America B;2019-11-12

2. Suitable factorization of the total intersubband scattering rates for efficient calculation of the current densities and gain characteristics in quantum cascade lasers;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-06-30

3. Temperature-Driven Enhancement of the Stimulated Emission Rate in Terahertz Quantum Cascade Lasers;IEEE Journal of Quantum Electronics;2017-02

4. Fourier-transform-based model for carrier transport in semiconductor heterostructures: Longitudinal optical phonon scattering;Journal of Applied Physics;2016-06-07

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