Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4769229
Reference18 articles.
1. Size-dependent resistivity of metallic wires in the mesoscopic range
2. Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology
3. Ultrathin Barrier Formation Using Combination of Manganese Oxide Encapsulation and Self-Aligned Copper Silicon Nitride Barriers for Copper Wiring in Future LSI Interconnects
4. Seedless Superfill: Copper Electrodeposition in Trenches with Ruthenium Barriers
5. Electrodeposition of Copper Thin Film on Ruthenium
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