Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4726037
Reference22 articles.
1. Long‐wavelength photoluminescence of InAs1−xSbx(0
2. AlSb/InAs HEMT's for low-voltage, high-speed applications
3. In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers
4. High quality InAsSb grown on InP substrates using AlSb∕AlAsSb buffer layers
5. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
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