Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance-Reference-Cited by-同舟云学术

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Published:2000-02 Issue:3 Volume:87 Page:1187-1192
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

San Andrés E.,del Prado A.,Martı́nez F. L.,Mártil I.,Bravo D.,López F. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371996

Reference33 articles.

1. Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

2. Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition

3. Formation of High‐Quality Nitrided Silicon Dioxide Films Using Electron‐Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane

4. Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing

5. Low interface trap density in rapid thermally annealed Al/SiNx:H/InP metal–insulator–semiconductor devices

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