Performance comparison of Si, SiC and GaN based power MOSFET/HEMT using DC-DC boost converter
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Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0183660
Reference11 articles.
1. Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications
2. B.J. Baliga, Power MOSFETs In Fundamentals of Power Semiconductor Devices., 2nd ed.; Springer: Raleigh, NA, USA, 2019, pp. 413–449.
3. S. Dimitrijev, Principles of semiconductor devices, USA: Oxford University Press, 2012.
4. V. Viswan, V. A M, and V. TP, “Simulation and performance comparison of Silicon and Silicon carbide-based DC-DC Buck Boost converter using LTSpice.” In 2015 International Conference on Power, Instrumentation, Control and Computing (PICC), pp. 1–5. IEEE, 2015.
5. J. Wang, “A Comparison between Si and SiC MOSFETs,” in IOP Conference Series: Materials Science and Engineering, Volume 729, 2019 International Conference on Applied Chemistry and Industrial Catalysis 15-17 November 2019, Shenzhen, China.
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