Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1424479
Reference14 articles.
1. High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric
2. Insulator investigation on SiC for improved reliability
3. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
4. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
5. Shallow electron traps at the 4H–SiC/SiO2 interface
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1. Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices;Physical Review Applied;2021-03-02
2. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19
3. Effects of high-temperature diluted-H2 annealing on effective mobility of SiC MOSFETs estimated by split capacitance–voltage technique;Japanese Journal of Applied Physics;2017-10-12
4. Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique;Microelectronic Engineering;2016-05
5. Effects of interface state density on 4H-SiC n-channel field-effect mobility;Applied Physics Letters;2014-02-24
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