Ge concentration in regrown GaAs for ohmic contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120519
Reference18 articles.
1. Metal-semiconductor contacts for GaAs bulk effect devices
2. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
3. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system
4. Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases
5. Thermally stable non‐gold Ohmic contacts ton‐type GaAs. I. NiGe contact metal
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1. “Cold” Tunneling Ohmic Contact With p-GaAs Nanolayer 10 nm Thick;IEEE Transactions on Electron Devices;2023-06
2. Ge/Ni–InGaAs Solid-State Reaction for Contact Resistance Reduction on n$^{+}$ In$_{0.53}$Ga$_{0.47}$As;Japanese Journal of Applied Physics;2012-02-20
3. Ge/Ni–InGaAs Solid-State Reaction for Contact Resistance Reduction on n+In0.53Ga0.47As;Japanese Journal of Applied Physics;2012-02-01
4. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
5. Progress in electronic materials characterization;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-09
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