Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing-Reference-Cited by-同舟云学术

Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

Published:2019-04 Issue:13 Volume:114 Page:132102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Saito Yuta¹²^ORCID,Kolobov Alexander V.¹³^ORCID,Fons Paul¹^ORCID,Mitrofanov Kirill V.¹^ORCID,Makino Kotaro¹^ORCID,Tominaga Junji¹^ORCID,Robertson John²

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan

2. Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom

3. Faculty of Physics, Herzen State Pedagogical University, St Petersburg 191186, Russia

Funder

Japan Society for the Promotion of Science

Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5088068

Reference56 articles.

1. Phase-change materials for rewriteable data storage

2. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

4. Understanding the phase-change mechanism of rewritable optical media

5. Role of Ge Switch in Phase Transition: Approach using Atomically Controlled GeTe/Sb2Te3Superlattice

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