Time dependent and temperature dependent properties of the forward voltage characteristic of InGaN high power LEDs-Reference-Cited by-同舟云学术

Time dependent and temperature dependent properties of the forward voltage characteristic of InGaN high power LEDs

Published:2017-03 Issue:3 Volume:7 Page:035206
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Fulmek P. L.¹,Haumer P.¹,Wenzl F. P.²,Nemitz W.²,Nicolics J.¹^ORCID

Affiliation:

1. Department of Applied Electronic Materials, Institute of Sensor and Actuator Systems, Technische Universität Wien, 1040 Vienna, Austria

2. Institute for Surface Technologies and Photonics, Joanneum Research Forschungsgesellschaft mbH, 8160 Weiz, Austria

Funder

Österreichische Forschungsförderungsgesellschaft (FFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4978265

Reference20 articles.

1. Thermal Analysis of InGaN/GaN Multiple Quantum Well Light Emitting Diodes with Different Mesa Sizes

2. M. Weilguni, J. Nicolics, R. Medek, M. Franz, G. Langer, and F. Lutschounig, Conf. Proc. of the 33rd Int. Spring Seminar on Electronics Technology, 238 (2010).

3. Thermal Characteristics Analysis of Die Attach Layer Based on Time-Constant Spectrum for High-Power LED

4. Effect of junction temperature on heat dissipation of high power light emitting diodes

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