Determination of energy band and surface‐state locations in GaAs using the separated‐medium surface‐acoustoelectric effect
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88344
Reference9 articles.
1. Determination of semiconductor surface properties using surface acoustic waves
2. Application of surface waves to the study of semiconductor surface state using the separated−medium acoustoelectric effect
3. Wavelength dependence of the photoenhancement of nonlinear surface‐wave convolution
4. Surface state memory in surface acoustoelectric correlator
5. Storage of acoustic signals in surface states in silicon
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Drift mobility of amorphous semiconductors measured by the traveling-wave technique;Physical Review B;1992-02-15
2. 10. Surface Elastic Waves;Methods in Experimental Physics;1981
3. Determination of capture cross section and surface-states concentration profile using the surface-acoustic-wave convolver;IEEE Transactions on Electron Devices;1980-02
4. Contactless semiconductor surface characterization using surface acoustic waves;Surface Science;1979-07
5. Study of the Semiconductor Surface Space Charge Layer Using a SAW Convolver;IEEE Transactions on Sonics and Ultrasonics;1977-07
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