Low temperature epitaxy of Si and Si1−xGex by utrahigh vacuum-chemical molecular epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363843
Reference21 articles.
1. Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures
2. A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology
3. SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
4. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
5. Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design
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