Movement of basal plane dislocations in GaN during electron beam irradiation-Reference-Cited by-同舟云学术

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Movement of basal plane dislocations in GaN during electron beam irradiation

Published:2015-03-30 Issue:13 Volume:106 Page:132101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yakimov E. B.¹²,Vergeles P. S.¹,Polyakov A. Y.²,Lee In-Hwan³,Pearton S. J.⁴

Affiliation:

1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia

2. National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia

3. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, South Korea

4. University of Florida, Gainesville, Florida 32611, USA

Funder

Defense Threat Reduction Agency (DTRA)

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4916632

Reference28 articles.

1. History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond

2. S. Nakamura , in GaN and Related Materials II, edited by S. J. Pearton ( Gordon and Breach Science, the Netherlands, 2000), pp. 1–46.

3. Green Nitride LEDs

4. High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics

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