Fluctuation electron microscopy on silicon amorphized at varying self ion-implantation conditions
Author:
Affiliation:
1. Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Straße 10, 48159 Münster, Germany
2. Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5107494
Reference45 articles.
1. Variable Coherence Microscopy: a Rich Source of Structural Information from Disordered Materials
2. Comparative Fluctuation Microscopy Study of Medium-Range Order in Hydrogenated Amorphous Silicon Deposited by Various Methods
3. Fluctuation microscopy: a probe of medium range order
4. Variable Resolution Fluctuation Electron Microscopy on Cu-Zr Metallic Glass Using a Wide Range of Coherent STEM Probe Size
5. Fluctuation microscopy in the STEM
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