Cross‐sectional transmission electron microscope observation of step‐band formation on GexSi1−x(111) vicinal surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97544
Reference7 articles.
1. Theory of silicon superlattices: Electronic structure and enhanced mobility
2. Scaling Principle for Heterojunction Bipolar Integrated Circuit
3. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
4. A one-dimensional SiGe superlattice grown by UHV epitaxy
5. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of substrate orientation on the characteristics of Si1−xGex/Si strained layers grown by MBE;Journal of Crystal Growth;1990-01
2. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy;Applied Physics Letters;1988-03-14
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