Intrinsic limits of leakage current in self-heating-triggered threshold switches-Reference-Cited by-同舟云学术

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Intrinsic limits of leakage current in self-heating-triggered threshold switches

Published:2019-05-06 Issue:18 Volume:114 Page:183501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Ziwen¹^ORCID,Kumar Suhas²^ORCID,Williams R. Stanley³,Nishi Yoshio¹^ORCID,Wong H.-S. Philip¹

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

2. Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, California 94304, USA

3. Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA

Funder

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5089261

Reference46 articles.

1. Phase Change Memory

2. Metal–Oxide RRAM

3. Low-power non-volatile spintronic memory: STT-RAM and beyond

4. Neuromorphic computing using non-volatile memory

5. Access devices for 3D crosspoint memory

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