High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element
Author:
Affiliation:
1. Optoelectronics Research Centre, Tampere University of Technology, Tampere FIN-33101, Finland
Funder
Suomen Akatemia (Academy of Finland)
Horizon 2020 Framework Programme
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4971972
Reference18 articles.
1. The HITRAN 2008 molecular spectroscopic database
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3. High power cascade diode lasers emitting near 2 μm
4. High Spectral Purity High-Power GaSb-Based DFB Laser Fabricated by Nanoimprint Lithography
5. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
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