Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331385
Reference17 articles.
1. Microwave Field-Effect Transistors--1976
2. MP-A2 Low-power GaAs digital integrated circuits with normally-off MESFET's
3. GaAs MESFET logic with 4-GHz clock rate
4. Threshold voltages of normally off MESFET's
5. The prospects for ultrahigh-speed VLSI GaAs digital logic
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1. n + -GaAs / p + -InAlGaP / n + -InAlGaP Camel-Gate High-Electron Mobility Transistors;Electrochemical and Solid-State Letters;2006-02-01
2. Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors;Journal of The Electrochemical Society;2006
3. On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs;Solid-State Electronics;2003-01
4. InGaP/GaAs camel-gate field effect transistor with double δ-doping channel profiles;Materials Chemistry and Physics;2002-01
5. Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor;Japanese Journal of Applied Physics;2001-01-15
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