Energy storage properties of epitaxially grown xCaZrO3–(1−x)NaNbO3 thin films prepared with chemical solution deposition method
Author:
Affiliation:
1. Institute for Material Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan
2. School of Engineering, Tohoku University, Sendai 980-8578, Japan
Funder
Iketani Science and Technology Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0004239
Reference42 articles.
1. High to ultra-high power electrical energy storage
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5. Linear-like lead-free relaxor antiferroelectric (Bi0.5Na0.5)TiO3–NaNbO3 with giant energy-storage density/efficiency and super stability against temperature and frequency
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