Charge-based deep level transient spectroscopy of phosphorous-doped homoepitaxial diamond
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616635
Reference38 articles.
1. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
2. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
3. Growth and characterization of phosphorus doped n-type diamond thin films
4. Growth and Characterization of Phosphorus Doped n-Type Diamond Thin Films
5. Phosphorus-doped chemical vapor deposition of diamond
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1. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond;Journal of Applied Physics;2015-10-14
2. Effect of doping on electronic states in B-doped polycrystalline CVD diamond films;Semiconductor Science and Technology;2012-05-21
3. Deep hole traps in boron-doped diamond;Physical Review B;2010-06-04
4. Electrical properties of nanocrystalline GaN film prepared by magnetron sputtering;Journal of Alloys and Compounds;2009-01
5. Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer;Diamond and Related Materials;2005-11
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