Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1608495
Reference13 articles.
1. Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors
2. Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy
3. State of the art of 3C-SiC/silicon on insulators
4. Comparison of the electrical and optical properties of 3C-SiC on SOI from different origin
5. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
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