Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices
2. MBE growth of wide band gap Pb1−xSrxSe on Si(111) substrate
3. Reduction of Threading Dislocation Densities in Heavily Lattice Mismatched PbSe on Si(111) by Glide
4. Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells
5. Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices
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