A precision method for laser focusing on laser beam induced current experiments
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1511794
Reference8 articles.
1. Detection of junction failures and other defects in silicon and III–v devices using the LBIC technique in lateral configuration
2. Mapping of defects and their recombination strenght by a light-beam-induced current in silicon wafers
3. Non-doping light impurities in silicon for solar cells
4. Consideration of Band Bending and Reduced Optical Transmittance at Grain Boundaries in LBIC Analysis
5. Influence of oxygen on the recombination strength of dislocations in silicon wafers
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2. Investigation of rough surfaces on Cu2ZnSn(SxSe1-x)4 monograin layers using light beam induced current measurements;Applied Surface Science;2017-11
3. Application of lateral photovoltage towards contactless light beam induced current measurements and its dependence on the finite beam size;Review of Scientific Instruments;2014-07
4. Spatial uniformity inspection apparatus for solar cells using a projection display;Applied Optics;2012-07-02
5. Experimental analysis and computer simulation of a methodology for laser focusing in the solar cell characterization by laser beam induced current;Review of Scientific Instruments;2012-04
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