Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo-Reference-Cited by-同舟云学术

Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo

Published:2023-09-01 Issue:9 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Mathew S.¹^ORCID,Reiprich J.¹,Narasimha S.¹,Abedin S.¹,Kurtash V.¹^ORCID,Thiele S.¹,Scheler T.²,Hähnlein B.³,Schaaf P.²^ORCID,Jacobs H. O.¹^ORCID,Pezoldt J.¹

Affiliation:

1. FG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro- und Nanotechnologien MacroNano®, Institut für Werkstofftechnik 1 , TU Ilmenau, Postfach, 100565, 98684 Ilmenau, Germany

2. FG-Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik, Institut für Mikro- und Nanotechnologien MacroNano® 2 , TU Ilmenau, Gustav-Kirchhoff-Straße 5, 98693 Ilmenau, Germany

3. FG Technische Physik I, Institut für Physik, Institut für Mikro- und Nanotechnologien MacroNano®, Technische Universität Ilmenau 3 , 98684 Ilmenau, Germany

Abstract

Hysteresis effects and their tuning with electric fields and light were studied in thin film molybdenum disulfide transistors fabricated from sulfurized molybdenum films. The influence of the back-gate voltage bias, voltage sweep range, illumination, and AlOx encapsulation on the hysteresis effect of the back-gated field effect transistors was studied and quantified. This study revealed the distinctive contribution of MoS2 surface, MoS2/SiO2 interface defects and their associated traps as primary sources of of hysteresis.

Funder

Carl Zeiss Foundation

Freistaat Thüringen

European Fund for Regional Development

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0165868/18143352/095224_1_5.0165868.pdf

Reference29 articles.

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2. A comprehensive review on synthesis and applications of molybdenum disulfide (MoS2) material: Past and recent developments

3. Hysteresis in Single-Layer MoS2 Field Effect Transistors