Recombination by grain-boundary type in CdTe-Reference-Cited by-同舟云学术

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Recombination by grain-boundary type in CdTe

Published:2015-07-14 Issue:2 Volume:118 Page:025702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Moseley John¹²,Metzger Wyatt K.¹,Moutinho Helio R.¹,Paudel Naba³,Guthrey Harvey L.¹,Yan Yanfa³,Ahrenkiel Richard K.¹²,Al-Jassim Mowafak M.¹

Affiliation:

1. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

2. Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA

3. Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606, USA

Funder

U.S. Department of Energy (Department of Energy)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4926726

Reference49 articles.

1. See http://www.firstsolar.com/en/about-us for “Taking Energy Forward” (accessed May 15, 2015).

2. Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency

3. T. A. Gessert and D. Bonnet , “ Polycrystalline cadmium telluride photovoltaic devices,” in Clean Electricity From Photovoltaics, 2nd ed., edited by M. D. Archer et al. ( World Scientific Publishing Co., 2015), Chap. 5, pp. 209–244.

4. D. B. Holt and B. G. Yacobi , Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures ( Cambridge University Press, 2007).

5. From atomic structure to photovoltaic properties in CdTe solar cells

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