Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation-Reference-Cited by-同舟云学术

Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation

Published:2005-11-15 Issue:10 Volume:98 Page:103509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Oshima Yuichi,Suzuki Takayuki,Eri Takeshi,Kawaguchi Yusuke,Watanabe Kazutoshi,Shibata Masatomo,Mishima Tomoyoshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2132508

Reference18 articles.

1. Thermal conductivity of GaN, 25–360 K

2. High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

3. Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

4. R. P. Vaudo, G. R. Brandes, J. S. Flynn, X. Xu, M. F. Chriss, C. S. Christos, D. M. Keogh, and F. D. Tamweber, International Workshop on Nitride Semiconductors, 2000 (unpublished), p. 15.

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