Epitaxial growth of HgTe by precracking metalorganic mercury and tellurium compounds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96605
Reference8 articles.
1. Epitaxial growth of HgTe by a MOVPE process
2. Metal‐organic vapor deposition of CdTe and HgCdTe films
3. High quality Hg1−xCdxTe epitaxial layers by the organometallic process
4. Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride
5. Photosensitisation: A stimulant for the low temperature growth of epitaxial HgTe
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MCT properties, growth methods and characterization;Handbook of Infra-red Detection Technologies;2002
2. Organotellurium precursors for metal organic chemical vapour deposition (MOCVD) of mercury cadmium telluride (MCT);Polyhedron;1996-03
3. Complex model for plasma-enhanced heteroepitaxial deposition of A2B6semiconductor compounds using MOC;Semiconductor Science and Technology;1992-02-01
4. High mobility HgTe and high resistivity CdTe grown by MOVPE on GaAs (001);physica status solidi (a);1990-09-16
5. CdZnTe/ZnTe and HgCdTe/CdTe quantum wells grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05
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