Highly doped evaporated amorphous silicon by alkali implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91201
Reference12 articles.
1. Electronic properties of substitutionally doped amorphous Si and Ge
2. Doping of evaporated amorphous silicon films
3. Diffusion of Li in Si at HighTand the Isotope Effect
4. Alkali ion doping of silicon
5. Influence of ion implantation on electrical properties of amorphous Ge and Si
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic transport properties of a-SiYH alloy films deposited by rf sputtering;Journal of Non-Crystalline Solids;1996-04
2. Reversible doping of hydrogenated amorphous silicon;Solid State Communications;1990-02
3. Thermoelectric power, photo and dark conductivity of doped amorphous silicon;Il Nuovo Cimento D;1985-08
4. Doping effects in amorphous silicon;Journal of Non-Crystalline Solids;1984-07
5. Chapter 8 Doping Effects in a-Si: H;Semiconductors and Semimetals;1984
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