Exact frequency‐dependent complex admittance of the semiconductor‐insulator‐semiconductor (SIS) diode including surface states and Shockley‐Read‐Hall (SRH) impurity effects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661742
Reference10 articles.
1. The exact low-frequency capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) and semiconductor-insulator-semiconductor (SIS) structures
2. Analysis of the Negative Resistance Associated with the Semiconductor—Insulator—Semiconductor (SIS) Structure
3. Effective mass and intrinsic concentration in silicon
4. Carrier mobilities in silicon empirically related to doping and field
5. Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysis
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2. Admittance measurements of magnetic freezeout inn−-type GaAs;Physical Review B;1992-11-15
3. Admittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAs;Physical Review B;1991-12-15
4. A temperature‐independent capacitance in semiconductor‐insulator‐semiconductor capacitors;Journal of Applied Physics;1990-05-15
5. Small signal equivalent circuit model for the metal-insulator-semiconductor tunnel diode;Solid-State Electronics;1978-06
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