Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon-Reference-Cited by-同舟云学术

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

Published:2018-05 Issue:5 Volume:6 Page:058302
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Scott Ethan A.¹,Gaskins John T.¹,King Sean W.²^ORCID,Hopkins Patrick E.¹³⁴

Affiliation:

1. Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

2. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA

3. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

4. Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

Army Research Office

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5021044

Reference57 articles.

1. Top-Gated Indium–Zinc–Oxide Thin-Film Transistors With In Situ Al2O3/HfO2 Gate Oxide

2. A New Rounded Edge Fin Field Effect Transistor for Improving Self-Heating Effects

3. Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

4. The distributed thermal model of fin field effect transistor

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