Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
Author:
Affiliation:
1. Department of Physics, Indian Institute of Science, Bangalore 560 012, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0071152
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