Charge transport-accumulation in multilayer structures with Si3N4 and thick(5.5 nm) SiO2-Reference-Cited by-同舟云学术

Charge transport-accumulation in multilayer structures with Si3N4 and thick(5.5 nm) SiO2

Published:2015-04-21 Issue:15 Volume:117 Page:154103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Novikov Yu. N.¹

Affiliation:

1. Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia

Funder

Russian Science Fouudation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4918312

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3. Design considerations in scaled SONOS nonvolatile memory devices

4. Charge transport and trapping in silicon nitride‐silicon dioxide dielectric double layers

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