Subpicosecond photoluminescence from radiation‐damaged Ga0.47In0.53As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101852
Reference12 articles.
1. Measurement of the Γ‐L separation in Ga0.47In0.53As by ultraviolet photoemission
2. High speed, ion bombarded InGaAs photoconductors
3. Ultrafast luminescence spectroscopy using sum frequency generation
4. Time resolved luminescence of photoexcitedp‐type gallium arsenide by population mixing
5. Generation of optical pulses as short as 27 femtoseconds directly from a laser balancing self-phase modulation, group-velocity dispersion, saturable absorption, and saturable gain
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1. Ultrafast measurement of nonequilibrium carrier lifetime in an In_085Ga_015As/GaAs relaxed superlattice structure;Optics Letters;1995-03-15
2. Gain nonlinearities in semiconductor lasers: the combined effect of the modulation of the carrier density and the electron temperature at the beat frequency of interacting optical fields;Optics Communications;1993-07
3. Influence of electron heating and cooling on the dynamic behaviour of a semiconductor laser with a saturable absorber;Optics Communications;1993-02
4. Femtosecond carrier kinetics in low‐temperature‐grown GaAs;Applied Physics Letters;1992-12-21
5. Technology and photoluminescence of GaAs micro- and nanocrystallites;Superlattices and Microstructures;1992-01
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